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Numéro de référence | PBSS9410PA | ||
Description | 2.7 A PNP low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
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PBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01 — 11 May 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS8510PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −2.7 A;
IB = −135 mA
Min Typ Max Unit
- - −100 V
- - −2.7 A
- - −4 A
[1] - 110 166 mΩ
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Pages | Pages 15 | ||
Télécharger | [ PBSS9410PA ] |
No | Description détaillée | Fabricant |
PBSS9410PA | 2.7 A PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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