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NXP Semiconductors - 2.7 A PNP low VCEsat (BISS) transistor

Numéro de référence PBSS9410PA
Description 2.7 A PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS9410PA fiche technique
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PBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01 — 11 May 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS8510PA.
1.2 Features and benefits
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
„ Exposed heat sink for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 2.7 A;
IB = 135 mA
Min Typ Max Unit
- - 100 V
- - 2.7 A
- - 4 A
[1] - 110 166 mΩ

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