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PDF PBSS5330PA Data sheet ( Hoja de datos )
| Número de pieza | PBSS5330PA | |
| Descripción | 3A PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an
ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4330PA.
2. Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -3 A
- - -5 A
- 75 107 mΩ
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1 page  
NXP Semiconductors
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab980
10- 1
10- 5
10- 4
10- 3
10- 2
FR4 PCB, mounting pad for collector 1 cm2
10- 1
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.1
0.5
0.2
0.05
006aac000
1
0
0.02
0.01
10- 1
10- 5
10- 4
10- 3
10- 2
FR4 PCB, mounting pad for collector 6 cm2
10- 1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5330PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
11. Test information
- IB
90 %
10 %
- IC
90 %
- IBon (100 %)
input pulse
(idealized waveform)
- IBoff
output pulse
(idealized waveform)
- IC (100 %)
10 %
td tr
t on
Fig. 14. BISS transistor switching time definition
VBB
VCC
ts
t off
t
tf
006aaa266
oscilloscope (probe)
450 Ω
VI
RB
R2
R1
Fig. 15. Test circuit for switching times
RC
Vo (probe) oscilloscope
450 Ω
DUT
mgd624
PBSS5330PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PBSS5330PA.PDF ] | |
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