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Numéro de référence | PBSS4580PA | ||
Description | 5.6 A NPN low VCEsat (BISS) transistor | ||
Fabricant | NXP Semiconductors | ||
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PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 15 April 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5580PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 5.6 A;
IB = 280 mA
Min Typ Max Unit
- - 80 V
- - 5.6 A
- - 7A
[1] -
40 57 mΩ
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Pages | Pages 15 | ||
Télécharger | [ PBSS4580PA ] |
No | Description détaillée | Fabricant |
PBSS4580PA | 5.6 A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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