DataSheetWiki


PBSS4580PA fiches techniques PDF

NXP Semiconductors - 5.6 A NPN low VCEsat (BISS) transistor

Numéro de référence PBSS4580PA
Description 5.6 A NPN low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





1 Page

No Preview Available !





PBSS4580PA fiche technique
www.DataSheet4U.com
PBSS4580PA
80 V, 5.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 15 April 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5580PA.
1.2 Features and benefits
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
„ Exposed heat sink for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 5.6 A;
IB = 280 mA
Min Typ Max Unit
- - 80 V
- - 5.6 A
- - 7A
[1] -
40 57 mΩ

PagesPages 15
Télécharger [ PBSS4580PA ]


Fiche technique recommandé

No Description détaillée Fabricant
PBSS4580PA 5.6 A NPN low VCEsat (BISS) transistor NXP Semiconductors
NXP Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche