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PDF NTHD3100C Data sheet ( Hoja de datos )
| Número de pieza | NTHD3100C | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTHD3100C
Power MOSFET
Complementary, 20 V, +2.9 A /−3.2 A,
ChipFETt
Features
• Complementary N Channel and P Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Trench P−Channel for Low On Resistance
• Low Gate Charge N−Channel for Test Switching
• Pb−Free Package is Available
Applications
• DC−to−DC Conversion Circuits
• Load Switch Applications Requiring Level Shift
• Drive Small Brushless DC Motors
• Ideal for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Ch
P−Ch
VDSS
VGS
20
"12
"8.0
V
V
N−Channel
Continuous Drain
Current (Note 1)
P−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t≤10s
Steady
State
t≤10s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
ID
ID
PD
2.9 A
2.1
3.9
−3.2 A
−2.3
−4.4
1.1 W
Pulsed Drain Current
(Note 1)
N−Ch
P−Ch
t = 10 ms
t = 10 ms
IDM
12 A
−13
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
TJ,
TSTG
IS
TL
−55 to
150
1.1
260
°C
A
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
Junction−to−Ambient − t ≤ 10 s (Note 1)
RqJA
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
113 °C/W
60 °C/W
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 0
1
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(on) TYP
58 mW @ 4.5 V
77 mW @ 2.5 V
64 mW @ −4.5 V
85 mW @ −2.5 V
ID MAX
2.9 A
−3.2 A
D1 S2
G1 G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
Bottom View
Top View
C9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTHD3100CT1 ChipFET 3000/Tape & Reel
NTHD3100CT1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTHD3100C/D
1 page  
NTHD3100C
TYPICAL N−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
www.DataSheet4U.com
400 Ciss VDS = 0 V
VGS = 0 V
300
Crss
200
TJ = 25°C
5
Qg
4
VDS
3
QGS
2
QGD
VGS
15
12
9
6
100
Coss
1
0
10 5
05
VGS VDS
0
10 15 20 0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
ID = 2.9 A
TJ = 25°C
0.5 1
1.5 2
2.5
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
3
0
3
100
VDS = 10 V
ID = 2.9 A
VGS = 4.5 V
5
VGS = 0 V
TJ = 25°C
4
10
tr
td(off)
td(on)
3
2
tf
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
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| PDF Descargar | [ Datasheet NTHD3100C.PDF ] | |
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