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NXP Semiconductors - NPN resistor-equipped transistor

Numéro de référence PDTC113ET
Description NPN resistor-equipped transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PDTC113ET fiche technique
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PDTC113ET
NPN resistor-equipped transistor; R1 = 1 k, R2 = 1 k
Rev. 02 — 8 April 2004
Objective data sheet
1. Product profile
1.1 General description
NPN resistor-equipped transistors. PNP complement: PDTA113ET.
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s Reduces component count
s Reduces pick and place costs.
1.3 Applications
s General purpose switching and
amplification
s Inverter and interface circuits
s Circuit driver.
1.4 Quick reference data
Table 1:
Symbol
VCEO
IO
R1
R2
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor
bias resistor
Conditions
Min Typ Max Unit
- - 50 V
- - 100 mA
- 1 - k
- 1 - k
2. Pinning information
Table 2:
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline Symbol
3
1
Top view
2
R1
1
3
R2
2
sym007

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