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Datasheet NTJD4152P-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


NTJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NTJD1155LPower MOSFET, Transistor

NTJD1155L Power MOSFET 8 V, +1.3 A, High Side Load Switch with Level−Shift, P−Channel SC−88 The NTJD1155L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high lo
ON Semiconductor
ON Semiconductor		mosfet
2NTJD2152PTrench Small Signal MOSFET

NTJD2152P Trench Small Signal MOSFET 8 V, Dual P−Channel, SC−88 ESD Protection Features http://onsemi.com V(BR)DSS RDS(on) TYP 0.22 W @ −4.5 V −8 V 0.32 W @ −2.5 V 0.51 W @ −1.8 V −0.775 A ID Max • • • • • • • • • Leading –8 V Trench for Low RDS(ON) Performance ES
ON Semiconductor
ON Semiconductor		mosfet
3NTJD4001NSmall Signal MOSFET

NTJD4001N, NVTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • Low Gate Charge for Fast Switching • Small Footprint − 30% Smaller than TSOP−6 • ESD Protected Gate • AEC Q101 Qualified − NVTJD4001N • These Devices are Pb−Free and are RoHS Compliant App
ON Semiconductor
ON Semiconductor		mosfet
4NTJD4105CSmall Signal MOSFET

NTJD4105C Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88 Features • • • • • Complementary N and P Channel Device Leading −8.0 V Trench for Low RDS(on) Performance ESD Protected Gate − ESD Rating: Class 1 SC−88 Package for Smal
ON Semiconductor
ON Semiconductor		mosfet
5NTJD4152PTrench Small signal MOSFET

NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P−Channel, ESD Protected SC−88 Features http://onsemi.com V(BR)DSS RDS(on) Typ 215 mW @ −4.5 V −20 V 345 mW @ −2.5 V 600 mW @ −1.8 V −0.88 A ID Max • • • • • • • • Leading Trench Technology f
ON Semiconductor
ON Semiconductor		mosfet
6NTJD4158CSmall Signal MOSFET

NTJD4158C Small Signal MOSFET 30 V/−20 V, +0.25/−0.88 A, Complementary, SC−88 Features • Leading 20 V Trench for Low RDS(on) Performance • ESD Protected Gate • SC−88 Package for Small Footprint (2 x 2 mm) Applications http://onsemi.com V(BR)DSS N−Ch 30 V P−Ch
ON Semiconductor
ON Semiconductor		mosfet
7NTJD4401NSmall Signal MOSFET

NTJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • • • • • • • • • Small Footprint (2 x 2 mm) Low Gate Charge N−Channel Device ESD Protected Gate Same Package as SC−70 (6 Leads) Pb−Free Packages are Available http://onsemi.com V(BR)DSS
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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