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PDF QS8J5 Data sheet ( Hoja de datos )
| Número de pieza | QS8J5 | |
| Descripción | 4V Drive Pch Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Pch + Pch MOSFET
QS8J5
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
Application
Switching
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : J05
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8J5
Taping
TR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID
IDP *1
Is
Isp *1
5
20
1
20
PD *2
1.5
1.25
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
Inner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A
1 page  
QS8J5
Measurement circuits
Data Sheet
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www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.01 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet QS8J5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| QS8J1 | 1.5V Drive PchPch MOSFET | ROHM Semiconductor |
| QS8J2 | -12V Pch + Pch Middle Power MOSFET | ROHM Semiconductor |
| QS8J4 | 4V Drive Pch Pch MOSFET | ROHM Semiconductor |
| QS8J5 | 4V Drive Pch Pch MOSFET | ROHM Semiconductor |
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