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NXP Semiconductors - LDMOS S-Band radar power transistor

Numéro de référence BLS6G2731-6G
Description LDMOS S-Band radar power transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLS6G2731-6G fiche technique
BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 01 — 19 February 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 6
15 33
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %:
N Output power = 6 W
N Power gain = 15 dB
N Efficiency = 33 %
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.7 GHz to 3.1 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
I S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range

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