|
|
Datasheet BLL6H1214-500-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
BLL Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BLL1214-250 | L-band radar LDMOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLL1214-250 L-band radar LDMOS transistor
Product specification Supersedes data of 2002 Aug 06 2003 Aug 29
Philips Semiconductors
Product specification
L-band radar LDMOS transistor
FEATURES • High power gain • Easy power control �  NXP Semiconductors transistor | | |
| 2 | BLL1214-250R | LDMOS L-band radar power transistor BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The commo NXP Semiconductors transistor | | |
| 3 | BLL1214-35 | L-band radar LDMOS driver transistor DISCRETE SEMICONDUCTORS
www.datasheet4u.com
DATA SHEET
M3D381
BLL1214-35 L-band radar LDMOS driver transistor
Product specification 2002 Sep 27
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
FEATURES www.datasheet4u.com • High power gain • Easy power c NXP Semiconductors transistor | | |
| 4 | BLL6H0514-25 | LDMOS Driver Transistor BLL6H0514-25
LDMOS driver transistor
Rev. 02 — 17 March 2009
www.datasheet4u.com
Objective data sheet
1. Product profile
1.1 General description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tca NXP Semiconductors transistor | | |
| 5 | BLL6H0514L-130 | LDMOS driver transistor DataSheet.in
BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 — 9 August 2010 Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF perfo NXP Semiconductors transistor | | |
| 6 | BLL6H0514LS-130 | LDMOS driver transistor DataSheet.in
BLL6H0514L-130; BLL6H0514LS-130
LDMOS driver transistor
Rev. 1 — 9 August 2010 Preliminary data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF perfo NXP Semiconductors transistor | | |
| 7 | BLL6H1214-500 | LDMOS L-band radar power transistor BLL6H1214-500
LDMOS L-band radar power transistor
Rev. 02 — 1 April 2010
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF pe NXP Semiconductors transistor | |
| Esta página es del resultado de búsqueda del BLL6H1214-500-PDF.HTML. Si pulsa el resultado de búsqueda de BLL6H1214-500-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |