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PDF BLL1214-250R Data sheet ( Hoja de datos )
| Número de pieza | BLL1214-250R | |
| Descripción | LDMOS L-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
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BLL1214-250R
LDMOS L-band radar power transistor
Rev. 01 — 4 February 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead
flange package (SOT502A) with a ceramic cap. The common source is connected to the
flange.
Table 1. Test information
Typical RF performance at Th = 25 °C; tp = 1 ms; δ = 10 %; in a common source class-AB test
circuit.
Mode of operation f
VDS IDq
PL Gp ηD Pdroop(pulse) tr
tf
(GHz)
(V) (mA) (W) (dB) (%) (dB)
(ns) (ns)
pulsed RF
1.2 to 1.4 36 150 250 13 47 0.2
15 5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 36 V, an IDq of 150 mA, a tp of 1 ms with δ of 10 %:
Output power = 250 W
Power gain = 13 dB
Efficiency = 47 %
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
L-band radar applications in the 1.2 GHz to 1.4 GHz frequency range
1 page  
NXP Semiconductors
40
BLL1214-250R
www.DataSheet4U.com
LDMOS L-band radar power transistor
40
60
C5
C3
C1
C8
C7
C4
C6
C2
mld866
Fig 2.
See Table 9 for list of components.
Dimensions in mm.
The components are situated in one side of the copper-clad Rodgers Duroid 6010 Printed-Circuit
Board (PCB); εr = 10.2 F/m; thickness = 0.64 mm. The other side is unetched and serves as a
ground plane.
Component layout
BLL1214-250R_1
Product data sheet
Rev. 01 — 4 February 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLL1214-250R
www.DataSheet4U.com
LDMOS L-band radar power transistor
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLL1214-250R_1
Product data sheet
Rev. 01 — 4 February 2010
© NXP B.V. 2010. All rights reserved.
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| Número de pieza | Descripción | Fabricantes |
| BLL1214-250 | L-band radar LDMOS transistor | NXP Semiconductors |
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