|
|
Número de pieza | BLF878 | |
Descripción | UHF power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF878 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! BLF878
UHF power LDMOS transistor
Rev. 02 — 15 June 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 300 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
Table 1. Typical performance
RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit.
Mode of operation f
PL PL(PEP) PL(AV) Gp ηD
IMD3
(MHz)
(W)
(W) (W) (dB) (%) (dBc)
CW, class AB
860
300
- - 21 60 -
2-Tone, class AB
PAL BG
f1 = 860; f2 = 860.1 -
300
860 (ch69)
300 (peak sync.) [1] -
-
-
21 46 −35
21 45 -
DVB-T (8k OFDM) 858
-
- 75 21 32 −32 [2]
[1] Black video signal, sync expansion: input sync = 33 %; output sync ≥ 27 %.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:
N Peak envelope power load power = 300 W
N Power gain = 21 dB
N Drain efficiency = 46 %
N Third order intermodulation distortion = −35 dBc
I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent
drain current IDq = 1.4 A:
N Average output power = 75 W
N Power gain = 21 dB
N Drain efficiency = 32 %
N Third order intermodulation distortion = −32 dBc (4.3 MHz from center frequency)
1 page NXP Semiconductors
7.1 Narrowband RF figures
7.1.1 CW
24
Gp
(dB)
22
20
18
Gp
ηD
BLF878
www.DataSheet4U.com
UHF power LDMOS transistor
001aai076 80
(2) ηD
(%)
(1)
60
(2) 40
(1)
20
16
0
0
100 200 300 400
PL (W)
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 2. CW power gain and drain efficiency as a function of load power; typical values
BLF878_2
Product data sheet
Rev. 02 — 15 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 18
5 Page NXP Semiconductors
BLF878
www.DataSheet4U.com
UHF power LDMOS transistor
Table 8. Typical push-pull impedance …continued
Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W.
f Zi ZL
MHz
Ω
Ω
925
5.103 + j4.467
3.706 − j0.871
950
5.656 + j4.291
3.556 − j1.011
975
6.205 + j3.963
3.415 − j1.157
1000
6.696 + j3.463
3.281 − j1.308
7.5 Reliability
106
Years
105
001aai087
104 (1)
(2)
(3)
103 (4)
(5)
(6)
102
(7)
(8)
(9)
(10)
10 (11)
1
0 4 8 12 16 20 24
IDS(DC) (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 13. BLF878 electromigration (IDS(DC), total device)
BLF878_2
Product data sheet
Rev. 02 — 15 June 2009
© NXP B.V. 2009. All rights reserved.
11 of 18
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet BLF878.PDF ] |
Número de pieza | Descripción | Fabricantes |
BLF871 | UHF power LDMOS transistor | NXP Semiconductors |
BLF871S | UHF power LDMOS transistor | NXP Semiconductors |
BLF872 | UHF power LDMOS transistor | NXP Semiconductors |
BLF878 | UHF power LDMOS transistor | NXP Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |