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PDF BLF6G38S-25 Data sheet ( Hoja de datos )
| Número de pieza | BLF6G38S-25 | |
| Descripción | WiMAX power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G38-25; BLF6G38S-25www.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 02 — 23 December 2008
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp
ηD ACPR885k ACPR1980k
(MHz)
(V) (W) (dB) (%) (dBc)
(dBc)
1-carrier N-CDMA[1] 3400 to 3600 28 4.5 15 24 −45[2] −61[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
I Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:
N Average output power = 4.5 W
N Power gain = 15 dB
N Drain efficiency = 24 %
N ACPR885k = −45 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3400 MHz to 3800 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
1 page  
NXP Semiconductors
BLF6G38-25; BLF6G38S-25
www.DataSheet4U.com
WiMAX power LDMOS transistor
−17
ACPR
(dBc)
−29
001aah596
ACPR10M
(2)
−41 (1)
ACPR20M
(1)
−53 (2)
ACPR30M
−65
10−1
1
(2)
(1)
10 102
PL(AV) (W)
VDS = 28 V; IDq = 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS;
n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30.
(1) Low frequency component
(2) High frequency component
Fig 3. Adjacent channel power ratio as function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
17
Gp
(dB)
16
15
14
13
001aah597 27
ηD
(%)
26
−40
ACPR
(dBc)
(1)
(2)
ACPR885k
001aah598
Gp
−50 (1)
25
ηD
(2)
ACPR1500k
24 (2)
−60 (1)
ACPR1980k
23
12
3400
3450
3500
22
3550
3600
f (MHz)
−70
3400
3450
3500
3550
3600
f (MHz)
Fig 4.
PL(AV) = 4.5 W.
Power gain and drain efficiency as functions of
frequency; typical values
VDS = 28 V; IDq = 350 mA; PL(AV) = 4.5 W; single carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 5. Adjacent channel power ratio as function of
frequency; typical values
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Rev. 02 — 23 December 2008
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
BLF6G38-25; BLF6G38S-25
www.DataSheet4U.com
WiMAX power LDMOS transistor
10. Abbreviations
Table 11. Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW Continuous Wave
ESD
ElectroStatic Discharge
EVM
Error Vector Magnitude
FCH
Frame Control Header
FFT Fast Fourier Transform
IBW Instantaneous BandWidth
IS-95
Interim Standard 95
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
N-CDMA
Narrowband Code Division Multiple Access
OFDMA
Orthogonal Frequency Division Multiple Access
PAR Peak-to-Average power Ratio
PUSC
Partial Usage of SubChannels
RF Radio Frequency
QAM
Quadrature Amplitude Modulation
QPSK
Quadrature Phase Shift Keying
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
WCS
Wireless Communications Service
WiMAX
Worldwide Interoperability for Microwave Access
11. Revision history
Table 12. Revision history
Document ID
BLF6G38-25_BLF6G38S-25_2
Modifications:
BLF6G38-25_BLF6G38S-25_1
Release date Data sheet status
Change notice Supersedes
20081223 Product data sheet -
BLF6G38-25_BLF6G38S-25_1
• Changed the maximum drain current and the maximum junction temperature in
Table 4 on page 2
• Moved impedance information to Section 8
20080218 Preliminary data sheet -
-
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Rev. 02 — 23 December 2008
© NXP B.V. 2008. All rights reserved.
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