BLF6G38-10 Datasheet PDF - NXP Semiconductors
| Part Number | BLF6G38-10 | |
| Description | WiMAX power LDMOS transistor | |
| Manufacturers | NXP Semiconductors | |
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BLF6G38-10; BLF6G38-10Gwww.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 01 — 3 February 2009
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) Gp ηD ACPR885k
(MHz)
(V) (W) (dB) (%) (dBc)
1-carrier N-CDMA[1] 3400 to 3600 28 2
14 20 −49[2]
ACPR1980k
(dBc)
−64[2]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
I Qualified up to a maximum VDS operation of 32 V
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation
I Internally matched for ease of use
I Low gold plating thickness on leads
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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NXP Semiconductors
BLF6G38-10; BLF6G38-10G
www.DataSheet4U.com
WiMAX power LDMOS transistor
7.2.2 Graphs
12
EVM
(%)
8
001aaj362
4
0
10−1
1 10
PL (W)
Fig 1.
VDS = 28 V; IDq = 130 mA; f = 3500 MHz.
EVM as a function of load power;
typical values
20
Gp
(dB)
18
16
Gp
001aaj363
50
ηD
(%)
40
30
14 20
12 ηD
10
10
10−1
0
1 10
PL(AV) (W)
Fig 2.
VDS = 28 V; IDq = 130 mA; f = 3500 MHz.
Power gain and drain efficiency as function of
average load power; typical values
−20
ACPR
(dBc)
−30
001aaj364
ACPR10M
−40
ACPR20M
−50
ACPR30M
−60
10−1
1 10
PL(AV) (W)
VDS = 28 V; IDq = 130 mA; f = 3500 MHz.
Fig 3. Adjacent channel power ratio as a function of average load power; typical values
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Rev. 01 — 3 February 2009
© NXP B.V. 2009. All rights reserved.
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