BLF6G27-135 Datasheet PDF - NXP Semiconductors
| Part Number | BLF6G27-135 | |
| Description | WiMAX power LDMOS transistor | |
| Manufacturers | NXP Semiconductors | |
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BLF6G27-135; BLF6G27LS-135www.DataSheet4U.com
WiMAX power LDMOS transistor
Rev. 02 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation f
VDS PL(AV) PL(p) Gp ηD ACPR885k ACPR1980k
(MHz)
(V) (W) (W) (dB) (%) (dBc)
(dBc)
1-carrier N-CDMA[1] 2500 to 2700 32 20
200 16 22.5 −52[2]
−67[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA:
N Average output power = 20 W
N Power gain = 16 dB
N Drain efficiency = 22.5 %
N ACPR885k = −52.0 dBc in 30 kHz bandwidth
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2500 MHz to 2700 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
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NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
www.DataSheet4U.com
WiMAX power LDMOS transistor
−20
ACPR
(dBc)
−30
−40
001aah643
(1)
−50
(2)
(3)
−60
−70
0 4 8 12 16 20 24 28
PL(AV) (W)
VDS = 32 V; IDq = 1200 mA.
(1) f = 2600 MHz ± 10 MHz
(2) f = 2600 MHz ± 20 MHz
(3) f = 2600 MHz ± 30 MHz
Fig 3. Adjacent channel power ratio as function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
19
Gp
(dB)
18
17
16
15
14
001aah644
25
ηD
(%)
24
23
Gp
22
ηD
21
20
−45
ACPR
(dBc)
−50
−55
−60
−65
−70
(1)
(2)
ACPR885k
(2)
(1)
ACPR1500k
(2)
(1) ACPR1980k
001aah645
13
2500
2550
2600
19
2650
2700
f (MHz)
−75
2500
2550
2600
2650
2700
f (MHz)
Fig 4.
VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Power gain and drain efficiency as functions of
frequency; typical values
VDS = 32 V; IDq = 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 5. Adjacent channel power ratio as function of
frequency; typical values
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Rev. 02 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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