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PDF BLF6G22LS-100 Data sheet ( Hoja de datos )
| Número de pieza | BLF6G22LS-100 | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G22LS-100
Power LDMOS transistor
Rev. 02 — 31 March 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f
VDS PL(AV)
Gp ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 28 25
18.2 29 −37[1]
ACPR
(dBc)
−41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
Average output power = 25 W
Gain = 18.2 dB
Efficiency = 29 %
IMD3 = −37 dBc
ACPR = −41 dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page  
NXP Semiconductors
BLF6G22LS-100
www.DataSheet4U.com
Power LDMOS transistor
7.4 2-carrier W-CDMA
21
Gp
(dB)
19 Gp
001aah698 36
ηD
(%)
24
−35
IMD3
ACPR
(dBc)
−40
−45
001aah699
17 ηD
12
IMD3
−50
ACPR
15
0
0
10 20 30
PL(AV) (W)
−55
0
10 20 30
PL(AV) (W)
Fig 4.
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (± 5 MHz);
carrier spacing 10 MHz.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5.
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (± 5 MHz);
carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as functions of average load power; typical
values
BLF6G22LS-100_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
BLF6G22LS-100
www.DataSheet4U.com
Power LDMOS transistor
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF6G22LS-100_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
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