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PDF BD8314NUV Data sheet ( Hoja de datos )

Número de pieza BD8314NUV
Descripción Integrated 2.5A MOSFET 1ch Boost Converter
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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Datasheet
3.0V to 12V, Integrated 2.5A MOSFET 1ch
Boost Converter
BD8314NUV
General Description
BD8314NUV is a high-efficiency step-up switching
regulator with built-in power MOSFET that can output
8V or 10V from a 4-battery voltage supply such as
Li1cell, Li2cell, or a 5V fixed power supply line. The
built-in 80mΩ N-Channel FET switch is capable of
handling output current up to 2.5A (DC). This IC has a
flexible phase compensation system and a switching
frequency of 1.2MHz allowing the use of smaller
external output inductor and capacitor making the
construction of a compact power supply really easy.
Key Specifications
Input Voltage Range:
Output Voltage Range:
Switching Frequency:
Nch FET ON-Resistance:
Standby Current:
Operating Temperature Range:
3.0V to 12V
4.0V to 12V
1.2MHz(Typ)
80mΩ(Typ)
0μA (Typ)
-25°C to +85°C
Package
W (Typ) x D (Typ) x H (Max)
Features
Built-in 2.5A (DC)/14V N-Channel FET Switch
On-Chip Phase Compensation
between Input and Output of ERROR AMP.
Output Current:
600mA at 10V (3.5V to 10V Input)
600mA at 8V (3.0V to 8.0V Input)
Built-In Soft-Start Function.
Built-In Timer Latch System for Short Circuit
Protection Function.
VSON010V3030
3.00mm x 3.00mm x 1.00mm
Applications
Portable Equipment like DSC/DVC Powered by 4 Dry
Batteries or Li2cell
Typical Application Circuit
Input: 3.0V to 10V, Output: 10V / 500 mA
10V/500mA
RSX201L-30 (ROHM)
22μF
GRM32EB31C226KE16 (Murata)
200kΩ
22kΩ
10pF
10kΩ
ON/OFF
100kΩ
6 PGND
7 PGND
8 STB
9 INV
10 SWOUT
LLXx 5
LLXx 4
VREG 3
VCC 2
GND 1
4.7μH
DE3518E(TOKO)
3.0 to10V
10μF
1μF GRM31CB31E106KA75L(Murata)
GRM188B11A105KA61(Murata)
1μF
GRM21BB11C105KA01(Murata)
3.0 to 10V
Figure 1. Typical Application Circuit
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/21
TSZ02201-0Q3Q0NZ00380-1-2
17.Feb.2015 Rev.002

1 page




BD8314NUV pdf
BD8314NUV
Typical Performance Curves
(Unless otherwise specified, Ta = 25°C, VCC = 7.4V)
1.02
1.01
1.00
0.99
0.98
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Figure 4. INV Threshold vs Temperature
1.02
1.01
1.00
0.99
0.98
0
5
VCC [V]
10
Figure 5. INV Threshold vs VCC
15
5.3
5.2
5.1
5.0
4.9
4.8
4.7
-40
0 40 80
Temperature [°C]
120
Figure 6. VREG Voltage vs Temperature
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14
VCC [V]
Figure 7. VREG vs VCC
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
5/21
TSZ02201-0Q3Q0NZ00380-1-2
17.Feb.2015 Rev.002

5 Page





BD8314NUV arduino
BD8314NUV
Reference Application Data 1 - continued
60 180
40
Phase
120
20 60
0 Gain
-20
0
-60
-40 -120
-60 -180
100 1k 10k 100k 1M
Frequency [Hz]
Figure 27. Frequency Response Property 1
(VCC = 3.0V, IO = 200 mA)
60 180
Phase
40 120
20 60
0 Gain
-20
0
-60
-40 -120
-60
100
1k
-180
10k 100k 1M
Frequency [Hz]
Figure 28. Frequency Response Property 2
(VCC = 6.0V, IO= 200 mA)
60
60 180
180
40
Phase
120
40
120
Phase
20 60 20
60
0
Gain
-20
00
-60 -20
Gain
0
-60
-40 -120 -40
-120
-60
100
1k
10k 100k
Frequency [Hz]
-180
1M
Figure 29. Frequency Response Property 3
(VCC = 8.4 V, IO= 200 mA)
-60
100
1k 10k 100k
Frequency [Hz]
-180
1M
Figure 30. Frequency Response Property 4
(VCC = 3.0 V, IO= 500 mA)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
11/21
TSZ02201-0Q3Q0NZ00380-1-2
17.Feb.2015 Rev.002

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