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PDF NTMFS4707N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4707N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMFS4707N
Power MOSFET
30 V, 17 A, Single N−Channel,
SO−8 Flat Lead
Features
• Fast Switching Times
• Low Gate Charge
• Low RDS(on)
• Low Inductance SO−8 Package
Applications
• Notebooks, Graphics Cards
• DC−DC Converters
• Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation (Note 1)
Steady
State
t ≤ 10 s
Steady
State
t ≤ 10 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp ≤ 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10
mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
IDM
TJ,
TSTG
IS
EAS
TL
30 V
±20 V
10.2 A
7.4
17
2.3 W
6.25
6.9
4.9
1.0
51
−55 to
150
6.25
245
A
W
A
°C
A
mJ
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
55 °C/W
Junction−to−Ambient – t ≤ 10 s (Note 1)
RqJA
20
Junction−to−Ambient – Steady State (Note 2)
RqJA 122.5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(on) TYP
10 mW @ 10 V
13.5 mW @ 4.5 V
ID MAX
17 A
N−Channel
D
G
S
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 4707N
S AYWW
G
D
D
D
4707N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4707NT1G SO−8 FL 1500 Tape & Reel
(Pb−Free)
NTMFS4707NT3G SO−8 FL 5000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 1
1
Publication Order Number:
NTMFS4707N/D
1 page  
NTMFS4707N
PACKAGE DIMENSIONS
SO−8 FLAT LEAD
CASE 488AA−01
ISSUE A
D
2
D1
6
2X
0.20 C
A
B 2X
5 0.20 C
E1
2E
1 2 34
TOP VIEW
c
0.10 C
0.10 C
SIDE VIEW
A
DETAIL A
4X
q
A1
3X
e
DETAIL A
C
SEATING
PLANE
6X b
0.10 C A B
0.05 c L
1
e/2
4
K
www.DataSheet4U.com
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.90 0.99 1.20
A1 0.00 −−− 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.15 BSC
D1 4.50 4.90 5.10
D2 3.50 −−− 4.22
E 6.15 BSC
E1 5.50 5.80 6.10
E2 3.45 −−− 4.30
e 1.27 BSC
G 0.51 0.61 0.71
K 0.51 −−− −−−
L 0.51 0.61 0.71
L1 0.05 0.17 0.20
q 0 _ −−− 12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
E2
65
G D2
BOTTOM VIEW
L1
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| PDF Descargar | [ Datasheet NTMFS4707N.PDF ] | |
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