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NXP Semiconductors - 40V NPN low VCEsat (BISS) transistor

Numéro de référence PBSS302ND
Description 40V NPN low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS302ND fiche technique
PBSS302ND
40 V NPN low VCEsat (BISS) transistor
Rev. 01 — 19 April 2005
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)
SMD plastic package.
PNP complement: PBSS302PD.
1.2 Features
s Ultra low collector-emitter saturation voltage VCEsat
s 4 A continuous collector current capability IC (DC)
s Up to 15 A peak current
s Very low collector-emitter saturation resistance
s High efficiency due to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
Min
collector-emitter voltage open base
-
collector current (DC)
[1] -
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited
by Tj(max)
IC = 6 A; IB = 600 mA
-
[2] -
Typ
-
-
-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Max Unit
40 V
4A
15 A
75 m

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