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Número de pieza | FLL410IK-3C | |
Descripción | L-Band High Power GaAs FET | |
Fabricantes | Eudyna Devices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FLL410IK-3C (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FEATURES
・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=13.0dB(Typ.)
・High PAE: ηadd=52%(Typ.)
・Broad Band: 2.5~2.7GHz
・Hermetically Sealed Package
FLL410IK-3C
www.DataSheet4U.com
L-Band High Power GaAs FET
DESCRIPTION
The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
designed for use in 2.5 – 2.7 GHz band amplifiers. This new product
is uniquely suited for use in MMDS applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
100
Storage Temperature
Tstg -65 to +175
Channel Temperature
Tch
175
Unit
V
V
W
oC
oC
RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25oC)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤12
Gate Current
IGF RG=5Ω
≤88
Gate Current
IGR RG=5Ω
≥-25
Operating Channel Temperature
Tch
≤145
Unit
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Drain Current
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain *1
Drain Current
Power-added Efficiency
Symbol
IDSS
Vp
VGSO
POUT
GL
Idsr
ηadd
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=110mA
IGS=-1.1mA
VDS=12V
f=2.6 GHz
IDS=3A
Pin=35.0dBm
Min.
-
-0.1
-5.0
45.0
12.0
-
-
Limit
Typ.
4.0
-0.3
-
46.0
13.0
5.9
52
Thermal Resistance
Rth
*1:GL is measured at Pin=22.0dBm
Channel to Case
- 1.3
Max.
-
-0.5
-
-
-
7.6
Unit
A
V
V
dBm
dB
A
-%
1.5 oC/W
CASE STYLE: IK
ESD
Class Ⅲ
2000V ~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
Oct 2003
1
1 page ■ Package Out Line
FLL410IK-3C
www.DataSheet4U.com
L-Band High Power GaAs FET
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FLL410IK-3C.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLL410IK-3C | L-Band High Power GaAs FET | Eudyna Devices |
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