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PDF MBRF1030CT Data sheet ( Hoja de datos )
| Número de pieza | MBRF1030CT | |
| Descripción | (MBRF1030CT - MBRF10200CT) Schottky Barrier Rectifiers | |
| Fabricantes | Taiwan Semiconductor Company | |
| Logotipo |  |
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M B R F 1 0 3 0 C T T H R U M B R F 1 0 2 0 0 C Twww.DataSheet4U.com
Features
Isolation 10.0 AM PS. Schottky Barrier Rectifiers
Voltage Range
30 to 200 Volts
C u rre n t
10.0 Am peres
IT O -2 2 0 A B
Plastic m aterial used carries U nderw riters Laboratory
C lassifications 94V-0
M etal silicon junction, m ajority carrier conduction
Low pow er loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
G uardring for overvoltage protection
High tem perature soldering guaranteed:
260oC/10 seconds,0.25”(6.35m m )from case
.134(3.4)DIA
.11 3 ( 3 .0 )D I A
.272(6.9)
.248(6.3)
.112 (2 .85 )
.100(2.55)
.606(15.5)
.583(14.8)
M echanical Data
Cases: ITO -220AB m olded plastic
Term inals: Leads solderable per M IL-STD-750, M ethod
2026
Polarity: As m arked
M ounting position: Any
M ounting torque: 5 in. - lbs. m ax
W eight: 0.08 ounce, 2.24 gram s
. 11 0 (2 .8 )
.098(2.5)
.543(13.8)
.512(13.2)
PIN 1
PIN 3
PIN 2
Dim ensions in inches and (m illim eters)
M axim um Ratings and Electrical Characteristics
R ating at 25℃ am bient tem perature unless otherw ise specified.
Single phase, half wave, 60 H z, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
S y m b o l MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
1 0 3 0 1 0 3 5 1 0 4 0 1 0 4 5 1 0 5 0 1 0 6 0 10100 10150 10200
CT CT CT CT CT CT CT CT CT
M axim um R ecurrent Peak Reverse Voltage
VRRM 30 35 40 45 50 60 100 150 200
M axim um R M S Voltage
VRMS 21 24 28 31 35 42 70 105 140
M axim um D C Blocking Voltage
VDC
30 35 40 45 50 60 100 150 200
M axim um Average Forward Rectified Current
at TC=133oC
I(AV)
10
Peak Repetitive Forward Current (R ated VR,
Square W ave, 20KHz) at Tc=133oC
IFRM
10.0
Peak Forward Surge Current, 8.3 m s Single
Half Sine-w ave Superim posed on R ated
Load (JEDEC m ethod )
IFSM
150
Peak Repetitive Reverse Surge Current
(Note 1)
IRRM
0.5
M axim um Instantaneous Forward Voltage at
(Note 2)
IF= 5A,
IF= 5A,
IF = 1 0 A ,
Tc=25OC
Tc=125OC
Tc=25OC
IF=10A, Tc=125OC
VF
0.70
0.57
0.80
0.65
0.85
0.75
0.95
0.85
0.88
0.78
0.99
0.87
M axim um Instantaneous Reverse C urrent
at Rated DC Blocking Voltage @ Tc=25℃
@ Tc=125℃
IR
0.1
15
0.15
150
Voltage Rate of Change, (Rated VR)
RM S Isolation Voltage (t=1.0 second, R.H.
≦30%, TA=25℃)
(Note 4)
(Note 5)
(Note 6)
d V /d t
V ISO
10,000
4500
3500
1500
Typical Therm al Resistance Per Leg (Note3) Rθ JC
3.5
O perating Junction Tem perature R ange
TJ
-65 to +150
Storage Tem perature Range
TSTG
-65 to +150
Notes: 1. 2.0us Pulse W idth, f=1.0 KHz
2. Pulse Test: 300us Pulse W idth, 1% Duty C ycle
3. Therm al Resistance from Junction to Case Per Leg.
4. C lip M ounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. C lip m ounting (on case), where leads do overlap heatsink.
6. Screw m ounting with 4-40 screw, where washer diam eter is ? 4.9 m m (0.19”)
U n its
V
V
V
A
A
A
A
V
mA
mA
V /u S
V
℃ /W
℃
℃
- 132 -
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBRF1030CT.PDF ] | |
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