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MBRF10200CT fiches techniques PDF

Taiwan Semiconductor Company - Dual Common Cathode Schottky Rectifier

Numéro de référence MBRF10200CT
Description Dual Common Cathode Schottky Rectifier
Fabricant Taiwan Semiconductor Company 
Logo Taiwan Semiconductor Company 





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MBRF10200CT fiche technique
MBRF1035CT thru MBRF10200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
ITO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
SYMBOL 1035 1045 1050 1060 1090 10100 10150 10200 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT CT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
10
V
V
V
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
10 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
120 A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25
IF= 5 A, TJ=125
IF= 10 A, TJ=25
IF= 10 A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
0.70
0.57
0.80
0.67
15
0.5
0.80 0.85 0.88
0.65 0.75 0.78
0.90 0.95 0.98
0.75 0.85 0.88
0.1
10 5
10000
3.5
- 55 to +150
- 55 to +150
A
V
mA
V/μs
OC/W
OC
OC
Document Number: D1308015
Version: L13

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