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NXP Semiconductors - 2A PNP low VCEsat (BISS) transistor

Numéro de référence PBSS5220V
Description 2A PNP low VCEsat (BISS) transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBSS5220V fiche technique
PBSS5220V
www.DataSheet4U.com
20 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 01 — 13 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
s Portable applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current (DC)
ICM peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
tp 300 µs
IC = 1 A;
IB = 100 mA
Min Typ Max
- - 20
- - 2
- - 4
- 140 210
Unit
V
A
A
m

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