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PDF PBSS2540E Data sheet ( Hoja de datos )
| Número de pieza | PBSS2540E | |
| Descripción | 500 mA NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS2540E
www.DataSheet4U.com
40 V, 500 mA NPN low VCEsat (BISS) transistor
Rev. 01 — 4 May 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
PNP complement: PBS3540E.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
IC = 500 mA;
IB = 50 mA
Min Typ Max
- - 40
- - 500
--1
[1] -
380 500
Unit
V
mA
A
mΩ
1 page  
Philips Semiconductors
PBSS2540E
www.DataShee
40 V, 500 mA NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
RCEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 100 mA
VCE = 2 V; IC = 500 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 200 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 500 mA; IB = 50 mA
VBEsat
base-emitter
saturation voltage
IC = 500 mA; IB = 50 mA
VBEon
base-emitter turn-on VCE = 2 V; IC = 100 mA
voltage
fT transition frequency VCE = 5 V; IC = 100 mA;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
- - 100 nA
- - 50 µA
- - 100 nA
200 -
-
[1] 100
-
-
[1] 50
-
-
- - 50 mV
- - 100 mV
- - 200 mV
[1] - - 250 mV
[1] - 380 500 mΩ
[1] - - 1.2 V
- - 1.1 V
250 450 -
MHz
- - 6 pF
9397 750 15063
Product data sheet
Rev. 01 — 4 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 11
5 Page 
Philips Semiconductors
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
16 Contact information . . . . . . . . . . . . . . . . . . . . 10
PBSS2540E
www.DataSheet4U.com
40 V, 500 mA NPN low VCEsat (BISS) transistor
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 4 May 2005
Document number: 9397 750 15063
Published in The Netherlands
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PBSS2540E.PDF ] | |
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