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International Rectifier - INSULATED GATE BIPOLAR TRANSISOR

Numéro de référence IRG4P254S
Description INSULATED GATE BIPOLAR TRANSISOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4P254S fiche technique
www.DataSheet4U.com
PD -91591A
IRG4P254S
INSULATED GATE BIPOLAR TRANSISTOR
Standard Speed IGBT
Features
Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
C
G
E
n-channel
VCES = 250V
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 55A
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristors
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
* Package limited to 70A
www.irf.com
TO-247AC
Max.
250
98*
55
196
196
± 20
160
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000

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