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PDF PDTA123T Data sheet ( Hoja de datos )
| Número de pieza | PDTA123T | |
| Descripción | PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
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PDTA123T series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 7 March 2006
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number
Package
Philips
PDTA123TE
SOT416
PDTA123TK
SOT346
PDTA123TM
SOT883
PDTA123TS [1]
SOT54
PDTA123TT
SOT23
PDTA123TU
SOT323
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTC123TE
PDTC123TK
PDTC123TM
PDTC123TS
PDTC123TT
PDTC123TU
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s 100 mA output current capability
s Reduces component count
s Reduces pick and place costs
1.3 Applications
s Digital applications
s Controlling IC inputs
s Cost-saving alternative for BC857 series
in digital applications
s Switching loads
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ
--
--
1.54 2.2
Max
−50
−100
2.86
Unit
V
mA
kΩ
1 page  
Philips Semiconductors
www.DataSheet4U.com
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter cut-off
current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −20 mA
IC = −10 mA; IB = −0.5 mA
R1 bias resistor 1 (input)
Cc collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min Typ Max Unit
- - −100 nA
- - −1 µA
- - −50 µA
- - −100 nA
30 -
--
-
−150 mV
1.54 2.2
--
2.86 kΩ
3 pF
500
hFE
400
(1)
006aaa691
300 (2)
200
(3)
100
0
−10−1
−1
−10 −102
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−1
VCEsat
(V)
−10−1
(1)
(2)
(3)
006aaa692
−10−2
−10−1
−1
−10 −102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA123T_SER_1
Product data sheet
Rev. 01 — 7 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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