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PDF NTMFS4837N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4837N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4837N
Power MOSFET
30 V, 74 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
www.Da•taLShoewetS4iUd.ce oSmwitching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS 20 V
TA = 25°C
ID
16 A
TA = 85°C
11.5
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.2 W
10 A
7
0.88 W
74 A
53
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
47.2 W
148 A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
39 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 30 V, VGS = 10 V,
IL = 22 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
242 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
ID MAX
74 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
SD
S 4837N
S AYWWG
G GD
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMFS4837NT1G SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4837NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
1
Publication Order Number:
NTMFS4837N/D
1 page  
NTMFS4837N
1000
VGS = 20 V
Single Pulse
TC = 25°C
100
10 ms
10 100 ms
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1 1
dc
10
10 ms
100 ms
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward−Biased
Safe Operating Range
www.DataSheet4U.com
100
250
ID = 22 A
225
200
175
150
125
100
75
50
25
0
25
50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs,
Starting Junction Temperature
25°C
100°C
125°C
10
1
1 10 100 1000
PULSE WIDTH (ms)
Figure 13. EAS vs. Pulse Width
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTMFS4837N.PDF ] | |
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