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PDF NTMFS4836N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4836N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMFS4836N
Power MOSFET
30 V, 90 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
www.Da•taLShoewetS4iUd.ce oSmwitching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS 20 V
TA = 25°C
ID
18 A
TA = 85°C
13
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.25 W
11 A
8
0.89 W
90 A
65
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
IDM
TJ,
TSTG
IS
dV/dt
55.6 W
180 A
−55 to
+150
46
6
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 22 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
242 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
4.0 mW @ 10 V
6.0 mW @ 4.5 V
D (5,6)
ID MAX
90 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 4836N
S AYWWG
GG
D
D
D
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMFS4836NT1G SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4836NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 1
1
Publication Order Number:
NTMFS4836N/D
1 page  
NTMFS4836N
TYPICAL PERFORMANCE CURVES
5000
4500 Ciss
4000
TJ = 25°C
12
10
QT
20
18
16
3500
3000
2500
8
Ciss
6
VDS
14
VGS
12
10
2000 Crss
1500
4 Qgs
Qgd
8
6
1000
500
Coss
0
−15 −10 −5 0 5 10 15 20 25 30
www.DataSheet4U.com VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4
2
ID = 30 A
TJ = 25°C
2
00
0 5 10 15 20 25 30 35 40 45
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
VDS = 15 V
ID = 15 A
VGS = 11.5 V
100
10
tf
td(off)
tr
td(on)
30
VGS = 0 V
25 TJ = 25°C
20
15
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
10 ms
100
100 ms
10 1 ms
VGS = 20 V
SINGLE PULSE
1 TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
0.1 PACKAGE LIMIT
0.1 1
10
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
260
240
220
200
180
160
140
120
100
80
60
40
20
0
25
ID = 22 A
50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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