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NXP Semiconductors - 20 V PNP BISS loadswitch

Numéro de référence PBLS2002S
Description 20 V PNP BISS loadswitch
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBLS2002S fiche technique
PBLS2002S
20 V PNP BISS loadswitch
Rev. 01 — 4 August 2006
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)
plastic package.
www.DataSheet4U.com 1.2
Features
I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low VCEsat (BISS) transistor
VCEO
collector-emitter voltage open base
IC collector current
RCEsat
collector-emitter saturation IC = 2 A;
resistance
IB = 200 mA
TR2; NPN resistor-equipped transistor
-
-
[1] -
- 20 V
- 3 A
75 120 m
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
- - 50 V
- - 100 mA
3.3 4.7 6.1 k
R2/R1
bias resistor ratio
0.8 1
1.2
[1] Pulse test: tp 300 µs; δ ≤ 0.02.

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