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PDF HMD4M144D9WG Data sheet ( Hoja de datos )
| Número de pieza | HMD4M144D9WG | |
| Descripción | 64Mbyte(4Mx144) 200-pin ECC Mode | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMD4M144D9WG
64Mbyte(4Mx144) 200-pin ECC Mode 4K Ref. DIMM Design 5V
Part No. HMD4M144D9WG
GENERAL DESCRIPTION
The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight
CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
mounted on a 200-pin, double-sided, FR-4-printed circuit board. A 0.1uF or 4.7uF decoupling capacitor is mounted on the
printed circuit board for each DRAM components.
The module is a dual In-line memory module with edge connections and is intended for mounting in to 200-pin edge
connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs
are TTL-compatible.
FEATURES
www.DataSheet4U.com
w Access times : 50, 60 ns
w High -density 64MByte design
w Part identification
- HMD4M144D9WG (4K Cycles/64ms Ref, Gold)
w Single +5V ± 0.5V power supply
w JEDEC Standard pinout
w ECC mode operation
w TTL compatible inputs and output
OPTIONS
w Timing
50ns access
60ns access
w Packages
200-pin DIMM
MARKING
-5
-6
D
PERFORMANCE RANGE
Speed
-5
tRAC
50ns
-6 60ns
tCAC
13ns
15ns
tRC
90ns
110ns
tPC
35ns
40ns
PIN NAMES
Pin Name
Function
BA0-BA11 Address Input
DQ0-DQ143 Data In/Out
BWE
Read/Write Enable
Pin Name
BRAS
BCAS1,BCAS2
Vcc
Function
Pin Name
Function
Row Address Strobe
Vss
Ground
Column Address Strobe NC
No Connection
Power(+5V)
URL:www.hbe.co.kr
REV.1.0.(August.2002)
-1-
HANBit Electronics Co.,Ltd.
1 page  
HANBit
HMD4M144D9WG
Il(L) -60 40 µA
IO(L) -5 5 µA
VOH
2.4 -
V
VOL - 0.4 V
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.)
ICC2 : Standby Current (/RAS=/CAS=VIH )
ICC3 : /RAS Only Refresh Current * ( /CAS=VIH, /RAS, Address cycling @tRC=min )
ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min )
ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V )
ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @tRC=min )
IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V)
www.DataShIeOLe:t4OUu.ctpoumt Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V
VOH : Output High Voltage Level (IOH= -5mA )
VOL : Output Low Voltage Level (IOL = 4.2mA )
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the
output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once
while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
o
( TA=25 C, Vcc = 5V, f = 1Mz )
DESCRIPTION
Input Capacitance (A0-A11)
Input Capacitance (/WE)
Input Capacitance (/RAS0)
Input Capacitance (/CAS1-/CAS2)
Input/Output Capacitance (DQ0-31)
SYMBOL
CIN1
C IN2
CIN3
CIN4
CDQ1
MIN
-
-
-
-
-
MAX
65
80
50
40
20
UNITS
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(
0
o
C
≤
TA
≤
70oC
,
Vcc
=
5V±10%,
See
notes
1,2.)
STANDARD OPERATION
SYMBOL
-5
MIN MAX
Random read or write cycle time
tRC 110
Access time from /RAS
tRAC
50
Access time from /CAS
tCAC
15
Access time from column address
tAA
30
/CAS to output in Low-Z
tCLZ 0
Output buffer turn-off delay
tOFF 0 15
Transition time (rise and fall)
tT 3 50
-6
MIN MAX
UNIT
130 ns
60 ns
20 ns
35 ns
0 ns
0 20 ns
3 50 ns
URL:www.hbe.co.kr
REV.1.0.(August.2002)
-5-
HANBit Electronics Co.,Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMD4M144D9WG.PDF ] | |
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