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PDF HMD1M32M2EG Data sheet ( Hoja de datos )
| Número de pieza | HMD1M32M2EG | |
| Descripción | 4Mbyte(1Mx32) EDO Mode | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HMD1M32M2EG
4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design
Part No. HMD1M32M2EG
DESCRIPTION
The HMD1M32M2EG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in
42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The HMD1M32M2EG is
optimized for application to the systems, which are required high density and large capacity such as main memory of the
computers and an image memory systems, and to the others, which are, requested compact size.
The HMD1M32M2G provides common data and outputs.
www.DataShFeeeta4tUu.croems
w Part Indentification
- HMD1M32M2EG – Gold plate Lead
w 72 pins Single In-Line Package
w EDO Mode Capability
w Single +5V± 0.5V power supply
w Fast Access Time & Cycle Time
TRAC tCAC tRC
HMD1M32M2EG-45 45
13 69
HMD1M32M2EG-50 50
15 84
HMD1M32M2EG-60
w Low Power
60
17 104
Active: 1,870/1,650/1,430 mW(MAX)
Standby: 11mW(CMOS level : MAX)
w /RAS Only Refresh, /CAS before /RAS Refresh,
Hidden Refresh Capability
w All inputs and outputs TTL Compatible
w 1,024 Refresh Cycles/16ms
tHPC
16
20
25
PIN DESCRIPTION
Pin
A0 – A9
DQ0 – DQ31
/RAS0, /RAS2
/CAS0 - /CAS3
/WE
FUNCTION
Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read/Write Enable
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 25 DQ22 49 DQ8
2
DQ0
26
DQ7
50 DQ24
3 DQ16 27 DQ23 51 DQ9
4
DQ1
28
A7
52 DQ25
5 DQ17 29 NC 53 DQ10
6
DQ2
30
Vcc
54 DQ26
7 DQ18 31 A8 55 DQ11
8
DQ3
32
A9
56 DQ27
9 DQ19 33 NC 57 DQ12
10 Vcc 34 /RAS2 58 DQ28
11 NC 35 NC 59 Vcc
12 A0 36 NC 60 DQ29
13 A1 37 NC 61 DQ13
14 A2 38 NC 62 DQ30
15 A3 39 Vss 63 DQ14
16 A4 40 /CAS0 64 DQ31
17 A5 41 /CAS2 65 DQ15
18 A6 42 /CAS3 66 NC
19 NC 43 /CAS1 67 PD1
20 DQ4 44 /RAS0 68
PD2
21 DQ20 45 NC 69 PD3
22 DQ5 46 NC 70 PD4
23 DQ21 47
/WE
71
NC
24 DQ6 48 NC 72 Vss
PIN
PD1 – PD4
Vcc
Vss
NC
-
FUNCTION
Presence Detect
Power (+5V)
Ground
No Connection
-
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
-1-
HANBiT Electronics Co., Ltd.
1 page  
HANBit
HMD1M32M2EG
READ, WRITE AND REFRESH CYCLE (Common Parameters)
SYMBOL
PARAMETER
HMD1M32M2G-6
MIN MAX
tRC Random Read or Write Cycle Time 110 -
tPR /RAS Precharge Time
40 -
tRAS
/RAS Pulse Width
60 10K
tCAS
/CAS Pulse Width
15 10K
tASR
Row Address Setup Time
0-
tRAH
Row Address Hold Time
10 -
tASC
Column Address Setup Time
0-
www.DataSheettc4aUh.com Column Address Hold Time
10 -
tRCD
/RAS to /CAS Delay Time
20 45
tRAD
/RAS to Column Address Delay Time
15
30
tRSH
/RAS Hold Time
15 -
tCSH
/CAS Hold Time
60 -
tCRP
/CAS to /RAS Precharge Time
5-
tT Transition Time (Rise and Fall)
3 50
tREF
Refresh Period (1024 Cycle)
- 16
HMD1M32M2G-7
MIN MAX
130 -
50 -
70 10K
18 10K
0-
10 -
0-
15 -
20 52
15 35
18 -
70 -
5-
3 50
- 16
UNIT NOTE
ns
ns
ns
ns
ns
ns
ns
ns 9
ns 10
ns
ns
ns
ns
ns 8
ms
Read Cycle
SYMBOL
PARAMETER
tRAC
tCAC
tAA
tRCS
tRCH
tRRH
tRAL
tOFF
Access Time from /RAS
Access Time from /CAS
Access Time from Column Address
Read Command Setup Time
Read Command Hold Time to /CAS
Read Command Hold Time to /RAS
Column Address to /RAS Lead Time
Output Buffer Turn-off Time
HMD1M32M2G-6
MIN MAX
- 60
- 15
- 30
0-
0-
0-
30 -
- 15
HMD1M32M2G-7
MIN MAX
- 70
- 18
- 35
0-
0-
0-
35 -
- 15
UNIT NOTE
ns 2,3
ns 3,4
ns 3,5,14
ns
ns 6
ns 6
ns
ns 7
Write Cycle
SYMBOL
PARAMETER
twcs
Write Command Setup Time
URL:www.hbe.co.kr
REV. 1.0 (August. 2002)
HMD1M32M2G-6
MIN MAX
0-
-5-
HMD1M32M2G-7
MIN MAX
UNIT NOTE
0 - ns 11
HANBiT Electronics Co., Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMD1M32M2EG.PDF ] | |
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