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Numéro de référence | KHB5D0N50F2 | ||
Description | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 500V, ID= 5.0A
Drain-Source ON Resistance :
RDS(ON)=1.5 @VGS = 10V
Qg(typ.) = 21nC
wwMwA.DXaItMaSUheMetR4UA.cToImNG (Tc=25 )
RATING
CHARACTERISTIC
SYMBOL
KHB5D0N50F UNIT
KHB5D0N50P
KHB5D0N50F2
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
VDSS
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
500
30
5.0 5.0*
2.9 2.9*
20 20*
390
9.2
3.5
73 38
0.74 0.3
V
V
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthJC
RthCS
RthJA
1.71
0.5
62.5
3.31 /W
- /W
62.5 /W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
2007. 5. 10
S
Revision No : 0
KHB5D0N50P/F/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB5D0N50P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB5D0N50F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB5D0N50F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
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Pages | Pages 7 | ||
Télécharger | [ KHB5D0N50F2 ] |
No | Description détaillée | Fabricant |
KHB5D0N50F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KHB5D0N50F2 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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