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SEMIX353GD126HDC fiches techniques PDF

Semikron International - Trench IGBT Modules

Numéro de référence SEMIX353GD126HDC
Description Trench IGBT Modules
Fabricant Semikron International 
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SEMIX353GD126HDC fiche technique
SEMiX353GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX353GD126HDc
www.DataSheet4U.com
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 600 V
VGE 20 V
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 225 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 225 A
Tj = 125 °C
Tj = 125 °C
RG on = 2
RG off = 2
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
per IGBT
Values
1200
364
256
225
450
-20 ... 20
10
-40 ... 150
329
228
225
450
1700
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.7
2
1
0.9
3.1
4.9
5.8
0.1
16.0
0.84
0.73
1800
3.33
265
55
26.5
585
120
32.5
max. Unit
2.1
2.45
1.2
1.1
4.0
6.0
6.5
0.3
0.1
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
GD
© by SEMIKRON
Rev. 14 – 16.12.2009
1

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