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Semikron International - SPT IGBT Modules

Numéro de référence SEMIX352GAL128DS
Description SPT IGBT Modules
Fabricant Semikron International 
Logo Semikron International 





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SEMIX352GAL128DS fiche technique
SEMiX352GAL128Ds
SEMiX®2s
SPT IGBT Modules
SEMiX352GAL128Ds
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Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 150 °C
ICRM = 2xICnom
VCC = 600 V
VGE 20 V
Tj = 125 °C
VCES 1200 V
Tc = 25 °C
Tc = 80 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 8 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
377
268
200
400
-20 ... 20
10
-40 ... 150
297
204
200
400
2000
-40 ... 150
200
400
2000
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
min.
4.5
typ.
1.9
2.10
1
0.9
4.5
6.0
5
0.1
18.9
1.24
0.78
1920
2.00
max. Unit
2.35
2.55
1.15
1.05
6.0
7.5
6.5
0.3
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
GAL
© by SEMIKRON
Rev. 57 – 02.12.2008
1

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