K6R1008V1B-P Datasheet PDF - Samsung semiconductor
| Part Number | K6R1008V1B-P | |
| Description | 128Kx8 Bit High Speed Static RAM | |
| Manufacturers | Samsung semiconductor | |
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K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
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CMOS SRAM
Document Title
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
RevNo.
History
Rev. 0.0
Initial release with Design Target.
Rev.1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Rev.2.0
www.DataSheet4U.com
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 32-SOJ-300 package.
2.3. Add Capacitive load of the test environment in A.C test load.
2.4. Change D.C characteristics.
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
ICC
160/150/140mA
160/155/150mA
ISB
30mA
50mA
Rev. 2.1
Change Standby and Data Retention Current for L-ver.
Items
Previous spec.
Changed spec.
ISB1
0.5mA
0.7mA
IDR at 3.0V
0.4mA
0.5mA
IDR at 2.0V
0.3mA
0.4mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Feb. 25th, 1998 Final
Aug. 4th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.1
August 1998
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K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
WRITE CYCLE*
Parameter
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
K6R1008V1B-8
Min Max
8-
6-
0-
6-
6-
8-
0-
04
Data to Write Time Overlap
www.DataShDeaetat4HUo.lcdofrmom Write Time
End Write to Output Low-Z
tDW 4
tDH 0
tOW 3
-
-
-
* The above parameters are also guaranteed at industrial temperature range.
K6R1008V1B-10
Min Max
10 -
7-
0-
7-
7-
10 -
0-
05
5-
0-
3-
PRPErLeIMlimINinAaRrYy
CMOS SRAM
K6R1008V1B-12
Min Max
12 -
8-
0-
8-
8-
12 -
0-
06
6-
0-
3-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tRC
tOH
Previous Valid Data
tAA
Valid Data
-5-
Rev 2.1
August 1998
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K6R1008V1B-P electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ K6R1008V1B-P.PDF Datasheet ] | |
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