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Datasheet H55S1222EFP-A3E-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
H55 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | H5551 | NPN SILICON TRANSISTOR N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5551
¨€
AMPLIFIER TRANSISTOR
Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW
¨€
T stg ¡ ª Tj¡ª
ABSOLUTE MAXIMUM RATINGS£¨
Storage Temperature¡ - ¡ Junction Temperature¡ - �  SHANTOU HUASHAN ELECTRONIC DEVICES transistor | | |
| 2 | H556 | PNP Silicon Transistor P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H556
¨€ ¨€
T stg ¡ ª Tj¡ª PC¡ª VCBO¡ª VCEO¡ª
SWITCHING AND AMPLIFIER ABSOLUTE MAXIMUM RATINGS£¨
Storage Temperature¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡- ¡Col  Shantou Huashan Electronic transistor | | |
| 3 | H557 | NPN SILICON TRANSISTOR PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
H557
¨€ APPLICATIONS
SWITCHING AND AMPLIFIER ¨€
ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
TO-92
T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡- SHANTOU HUASHAN ELECTRONIC DEVICES transistor | | |
| 4 | H558 | NPN SILICON TRANSISTOR PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
H558
¨€ APPLICATIONS
SWITCHING AND AMPLIFIER ¨€
ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£©
TO-92
T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡- SHANTOU HUASHAN ELECTRONIC DEVICES transistor | | |
| 5 | H55S1222EFP-60E | 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 1,048,576 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any respo  Hynix Semiconductor data | | |
| 6 | H55S1222EFP-60M | 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 1,048,576 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any respo Hynix Semiconductor data | | |
| 7 | H55S1222EFP-75E | 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of 128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 1,048,576 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any respo Hynix Semiconductor data | |
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