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PDF V40100P Data sheet ( Hoja de datos )
| Número de pieza | V40100P | |
| Descripción | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Vishay Siliconix | |
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V40100P
Vishay Generawl wSwe.DmataicShoenetd4Uu.ccotmor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.372 V at IF = 5 A
TMBS®
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
2 x 20 A
100 V
300 A
0.60 V
150 °C
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt
TJ, TSTG
V40100P
100
40
20
300
1.0
10 000
- 40 to + 150
UNIT
V
A
A
A
V
°C
Document Number: 88939 For technical questions within your region, please contact one of the following:
Revision: 27-May-08
www.vishay.com
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet V40100P.PDF ] | |
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