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PDF C2611 Data sheet ( Hoja de datos )
| Número de pieza | C2611 | |
| Descripción | Plastic-Encapsulated Transistors | |
| Fabricantes | TRANSYS Electronics | |
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TO-251 Plastic-Encapsulated Transistors
C 2611
FEATURES
Power dissipation
TRANSISTOR (NPN)
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 0.2
Collector-base voltage
A
V(BR)CBO: 600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-251
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
Ic= 100µA, IE=0
V(BR)CEO
IC= 1mA , IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO VCB= 600V, IE=0
ICEO VCE= 400V, IB=0
IEBO VEB= 7V, IC=0
hFE(1)
VCE= 20V, IC= 20mA
hFE(2)
VCE= 10V, IC= 0.25 mA
VCE(sat)
IC= 50mA, IB= 10 mA
VBE(sat)
IC= 50 mA, IB= 10mA
600
400
7
10
5
V
V
V
100 µA
200 µA
100 µA
40
0.5 V
1.2 V
Transition frequency
fT
VCE= 20 V, IC=20mA
f = 1MHz
8
MHz
Fall time
Storage time
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
t f IC=50mA,
IB1=-IB2=5mA,
t S VCC=45V
20-25
25-30
0.3 µs
1.5 µs
30-35
35-40
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