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PDF C2611 Data sheet ( Hoja de datos )
| Número de pieza | C2611 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C2611 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
www.DataSheet4U.com
TO-92 Plastic-Encapsulate Transistors
C2611
TRANSISTOR NPN
TO 92
FEATURES
Power dissipation
PCM : 0.75 W Tamb=25
Collector current
ICM : 0.2
A
Collector-base voltage
V(BR)CBO : 600 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
unless
1. BASE
2.COLLECTOR
3. EMITTER
otherwise specified
Parameter
Symbol
Test conditions
MIN TYP
123
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
600
V
Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
7
V
Collector cut-off current
ICBO VCB= 600 V , IE=0
100 A
Collector cut-off current
ICEO VCE= 400 V , IB=0
200 A
Emitter cut-off current
IEBO VEB= 7 V , IC=0
100 A
DC current gain
hFE 1
hFE 2
VCE= 20 V, IC= 20m A
VCE= 10V, IC= 0.25 m A
10
5
40
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 m A
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10m A
1.2 V
Transition frequency
fT
Fall time
Storage time
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
tf
tS
VCE= 20 V, IC=20mA
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
8
20-25
25-30
30-35
MHz
0.3 s
1.5 s
35-40
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C2611.PDF ] | |
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