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PDF FQP19N20C Data sheet ( Hoja de datos )
| Número de pieza | FQP19N20C | |
| Descripción | 200V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP19N20C / FQPF19N20C
N-Channel QFET® MOSFET
200 V, 19 A, 170 mΩ
November 2013
Features
• 19 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V,
ID = 9.5 A
• Low Gate Charge (Typ. 40.5 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
G
GDS TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP19N20C FQPF19N20C
200
19.0 19.0 *
12.1 12.1 *
76.0 76.0 *
± 30
433
19.0
13.9
5.5
139 43
1.11 0.34
-55 to +150
300
FQP19N20C
0.9
62.5
FQPF19N20C
2.89
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
100
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N ote s :
1 . Z θJC(t) = 0 .9 0 ℃ /W M a x.
2 . D u ty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP19N20C
100
1 0 -1
D =0.5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
※ N o tes :
1. Z θJC(t) = 2 .89 ℃ /W M ax.
2. D uty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF19N20C
©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP19N20C.PDF ] | |
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