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Numéro de référence | A1267 | ||
Description | PNP Transistor - 2SA1267 | ||
Fabricant | FORWARD INTERNATIONAL ELECTRONICS | ||
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1 Page
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FORWARD INTERNATIONAL ELECTRONICS LTD.
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY AMPLIFIER
* Complement to 2SC3199
* Collector-Emitter Voltage VCEO=-50V
2SA1267
PNP EPITAXIAL SILICON TRANSISTOR
Package: TO-92S
ABSOLUTE MAXIMUM RATINGS at Tamb=250C
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo -50
Collector-Emitter Voltage
Vceo -50
Emitter-Base Voltage
Vebo
-5
Collector Current
Ic -150
Collector Dissipation
Pc 450
Junction Temperature
Tj 150
Storage Temperature
Tstg -55~150
Unit
V
V
V
mA
mW
0C
0C
PIN:
STYLE
1
23
NO.1
E
C
B
ELECTRICAL CHARACTERISTICS at Tamb=250C
Characteristic
Symbol Min Typ
Collector-Base Breakdown Voltage
BVcbo -50
Collector-Emitter Breakdown Voltage BVceo -50
Emitter-Base Breakdown Voltage
BVebo -5
Collector Cutoff Current
Icbo
DC Current Gain
Hfe 70
Collector-Emitter Saturation Voltage Vce(sat)
Output Capacitance
Cob
Current Gain-Bandwidth Product
fT 80
Max Unit
Test Conditions
V Ic=-100uA Ie=0
V Ic=-1mA Ib=0
V Ie=-100uA Ic=0
-100 nA Vcb=-50V Ie=0
400 Vce=-6V Ic=-2mA
-0.3 V Ic=-100mA Ib=-10mA
7 pF Vcb=-10V Ie=0 f=1MHz
MHz Vce=-10V Ic=-1mA
CLASSIFICATION HFE
Classification
OY
GR
Hfe 70-140 120-240 200-400
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Pages | Pages 1 | ||
Télécharger | [ A1267 ] |
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