DataSheetWiki


K1B6416B6C fiches techniques PDF

Samsung semiconductor - 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

Numéro de référence K1B6416B6C
Description 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





1 Page

No Preview Available !





K1B6416B6C fiche technique
K1B6416B6C
UtRAMwww.DataSheet4U.com
Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
Revision History
Revision No. History
0.0 Initial Draft
- Design target
Draft Date
March 11, 2004
Remark
Advance
0.1 Revised
- Deleted Deep Power Down Mode support
April 19, 2004
Advance
0.2 Revised
- Changed product code from K1B6416B7C into K1B6416B6C
May 10, 2004
Advance
0.3 Revised
- Filled out Package type(54ball FBGA 6.0mm x 8.0mm)
September 1, 2004 Preliminary
- Changed Hi-Z parameters(tCHZ, tOHZ, tBHZ, tWZ) from Max.7ns
into Max.12ns and changed tHZ from Max.10ns into Max.12ns
- Updated "Fig.17 TIMING WAVEFORM OF WRITE CYCLE(1)" in
page 23
- Added comment on standby current(ISB1) measure condition as
"Standby mode is supposed to be set up after at least one active
operation after power up. ISB1 is measured after 60ms from the time
when standby mode is set up."
- Added comment on restriction of the transition between Asynchro-
nous Write operation and Fully Synchronous bus operation(Page
10,11)
- Filled out ISB1 value, ISBP value and ICC2 value in Table 17(DC AND
OPERATING CHARACTERISTICS)
- Added Synchronous Operating Current(ICC3, Max.40mA)
- Added tCSHP(A)(CS high pulse width) parameter as Min.10ns in the
ASYNCHRONOUS AC CHARACTERISTICS
0.4 Revised
October 12, 2004 Preliminary
- Changed ISB1(< 40°C) and ISBP(3/4 block, < 40°C) from 100µA into
120µA
- Changed ISBP(1/2 block and 1/4 block, < 40°C) from 95µA into 115µA
1.0 Finalized
January 20, 2005 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
January 2005

PagesPages 30
Télécharger [ K1B6416B6C ]


Fiche technique recommandé

No Description détaillée Fabricant
K1B6416B6C 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Samsung semiconductor
Samsung semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche