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K7N643645M fiches techniques PDF

Samsung semiconductor - 2Mx36 & 4Mx18 Pipelined NtRAM

Numéro de référence K7N643645M
Description 2Mx36 & 4Mx18 Pipelined NtRAM
Fabricant Samsung semiconductor 
Logo Samsung semiconductor 





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K7N643645M fiche technique
K7N643645M
K7N641845M
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2Mx36 & 4Mx18 Pipelined NtRAMTM
Document Title
2Mx36 & 4Mx18-Bit Pipelined NtRAMTM
Revision History
Rev. No.
History
Draft Date
0.0 1. Initial document.
Sep. 30. 2002
0.1 1. Delete the speed bins (FT : 7.5ns, 8.5ns / PP : 200MHz)
Oct. 8. 2002
0.2 1. Change to the New JTAG scan order.
Feb. 25, 2003
0.3 1. Add the comment about Vdd/Vddq wide by note on page 13.
Mar. 10, 2003
0.4 1. Delete the 119 BGA package type.
Aug. 18, 2004
0.5 1. Delete the 1.8V and 3.3V Vdd voltage level
Oct. 20, 2004
( Change the part number to K7N6436(18)45M from K7N6436(18)31M )
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - Oct. 2004
Rev 0.5

PagesPages 24
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