IRF6619TRPbF Datasheet PDF - International Rectifier
| Part Number | IRF6619TRPbF | |
| Description | DirectFET Power MOSFET | |
| Manufacturers | International Rectifier | |
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l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 97084
IRF6619PbF
IRF6619TRPbFwww.DataSheet4U.com
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
38nC 13nC 3.5nC 18nC 22nC 2.0V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6619PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
20 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS (Thermally limited)
IAR
EAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fÃContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
gRepetitive Avalanche Energy
±20
30
24
150
240
240
See Fig. 14, 15, 17a, 17b,
A
mJ
A
mJ
6.0 12
5.0
ID = 30A
10 ID= 16A
VDS= 16V
VDS= 10V
4.0
TJ = 125°C
3.0
8
6
4
2.0
TJ = 25°C
1.0
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
2
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS =
24A, VGS =10V. Part not recommended for use above this value.
1
5/3/06
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1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.2 0.6 1.0 1.4 1.8
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6619PbF
1000
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100µsec
10
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
180
160 LIMITED BY PACKAGE
2.5
140 2.0
120
100 ID = 250µA
80 1.5
60
40 1.0
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current vs. Case Temperature
1000
Duty Cycle = Single Pulse
100
10
0.01
0.5
-75 -50 -25 0
25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
1 0.05
0.10
0.1
0.01
1.0E-06
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1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E+00
1.0E+01
5
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| Information | Total 10 Pages | |
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| Part Number | Description | MFRS |
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