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PDF IRF6619 Data sheet ( Hoja de datos )
| Número de pieza | IRF6619 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96917
IRF6619www.DataSheet4U.com
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching above 1MHz
VDSS
20V max
Qg tot
VGS
RDS(on)
RDS(on)
±20V max 1.65mΩ@ 10V 2.2mΩ@ 4.5V
Qgd Qgs2 Qrr Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
38nC 13nC 3.5nC 18nC 22nC 2.0V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS (Thermally limited)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kÃContinuous Drain Current, VGS @ 10V (Package Limited)
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
eRepetitive Avalanche Energy
20
±20
30
24
150
240
240
See Fig. 14, 15, 17a, 17b,
V
A
mJ
A
mJ
6.0 12
5.0
ID = 30A
10 ID= 16A
VDS= 16V
VDS= 10V
4.0
TJ = 125°C
3.0
8
6
4
Notes:
2.0
TJ = 25°C
1.0
2.0 4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
10.0
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
2
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS =
24A, VGS =10V. Part not recommended for use above this value.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
2/10/05
1 page  
1000.0
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.2 0.6 1.0 1.4 1.8
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6619
1000
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100 100µsec
10
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
180
160 LIMITED BY PACKAGE
2.5
140 2.0
120
100 ID = 250µA
80 1.5
60
40 1.0
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current vs. Case Temperature
1000
Duty Cycle = Single Pulse
100
10
0.01
0.5
-75 -50 -25 0
25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
1 0.05
0.10
0.1
0.01
1.0E-06
www.irf.com
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E+00
1.0E+01
5
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| PDF Descargar | [ Datasheet IRF6619.PDF ] | |
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