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PDF K6F2016U4G Data sheet ( Hoja de datos )
| Número de pieza | K6F2016U4G | |
| Descripción | 2Mb(128K x 16 bit) Low Power SRAM | |
| Fabricantes | Samsung semiconductor | |
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K6F2016U4G Family
wPwrwe.DlaitmaShieneta4Ur.cyom
CMOS SRAM
2Mb(128K x 16 bit) Low Power SRAM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROP-
ERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
- 1 - Revision 0.0
April 2005
1 page  
K6F2016U4G Family
wPwrwe.DlaitmaShieneta4Ur.cyom
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. Industrial Product: TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+2.0V in case of pulse width ≤20ns.
3. Undershoot: -2.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
2.7
0
2.2
-0.33)
Typ Max Unit
3.0 3.3
V
00V
- Vcc+0.32) V
- 0.6 V
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current (CMOS)
Symbol
ILI VIN=Vss to Vcc
Test Conditions
Min Typ1) Max Unit
-1 - 1 µA
ILO CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
-1 - 1 µA
ICC1 Cycle time=1µs, 100%duty, IIO=0mA, CS≤0.2V,
LB≤0.2V or/and UB≤0.2V, VIN≤0.2V or VIN≥VCC-0.2V
- - 4 mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, CS=VIL,
LB=VIL or/and UB=VIL, VIN=VIL or VIH
70ns
55ns
-
-
- 22 mA
- 27
VOL IOL = 2.1mA
- - 0.4 V
VOH IOH = -1.0mA
2.4 - - V
Other input =0~Vcc
ISB1 1) CS≥Vcc-0.2V(CS controlled) or
2) LB=UB≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)
- 3 10 µA
1. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
- 5 - Revision 0.0
April 2005
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K6F2016U4G.PDF ] | |
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