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PDF IRF6635 Data sheet ( Hoja de datos )
| Número de pieza | IRF6635 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96981B
IRF6635www.DataSheet4U.com
DirectFET™ Power MOSFET
RoHs compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
47nC 17nC 4.7nC 48nC 29nC 1.8V
Ideal for CPU Core DC-DC Converters
Optimized for for SyncFET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has
been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
30
±20
32
25
180
250
200
25
Units
V
A
mJ
A
10 6.0
8
ID = 32A
5.0 ID= 25A
VDS= 24V
VDS= 15V
6 4.0
3.0
4
TJ = 125°C
2.0
2
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
1.0
0.0
0
10 20 30 40 50 60
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Starting TJ = 25°C, L = 0.63mH, RG = 25Ω, IAS = 25A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
06/02/05
1 page  
1000
100
10 TJ = 150°C
TJ = 25°C
TJ = 40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
175
150
125
100
75
50
25
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1000
100
10
IRF6635
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10msec
1msec
100msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01 0.10
1.00
10.00
100.00
VDS , Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.2
2.0
1.8
1.6
1.4 ID = 250µA
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
www.irf.com
900
800
ID TOP
9.1A
700 11A
BOTTOM 25A
600
500
400
300
200
100
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6635.PDF ] | |
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