|
|
Numéro de référence | K4T51163QE | ||
Description | 512Mb E-die DDR2 SDRAM Specification | ||
Fabricant | Samsung semiconductor | ||
Logo | |||
1 Page
K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
www.DataSheet4U.com
512Mb E-die DDR2 SDRAM Specification
60FBGA & 84FBGA with Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 of 45
Rev. 1.8 July 2007
|
|||
Pages | Pages 30 | ||
Télécharger | [ K4T51163QE ] |
No | Description détaillée | Fabricant |
K4T51163QB | 512Mb B-die DDR2 SDRAM | Samsung |
K4T51163QB-GCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
K4T51163QB-ZCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
K4T51163QE | 512Mb E-die DDR2 SDRAM Specification | Samsung semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |