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PDF NSBC114EDXV6T5 Data sheet ( Hoja de datos )
| Número de pieza | NSBC114EDXV6T5 | |
| Descripción | Dual Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSBC114EDXV6T1,
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low power surface mount applications where board space is at
a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Lead−Free Solder Plating
• These are Pb−Free Devices
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
50
50
100
Characteristic
(One Junction Heated)
Symbol
Max
Total Device Dissipation; TA = 25°C
Derate above 25°C
PD 357 (Note 1)
2.9 (Note 1)
Thermal Resistance, Junction-to-Ambient RqJA
Characteristic
(Both Junctions Heated)
Symbol
350 (Note 1)
Max
Total Device Dissipation; TA = 25°C
Derate above 25°C
PD 500 (Note 1)
4.0 (Note 1)
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
Range
RqJA
TJ, Tstg
250 (Note 1)
−55 to +150
1. FR−4 @ Minimum Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 6
1
www.DataSheet4U.com
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
NSBC114EDXV6T1
MARKING
DIAGRAM
SOT−563
CASE 463A
xx M G
1
PLASTIC
1
xx = Device Code (Refer to Page 2)
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NSBC1xxxDXV6T1 SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBC1xxxDXV6T5 SOT−563* 8000/Tape & Reel
NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
NSBC114EDXV6/D
1 page  
NSBC114EDXV6T1, NSBC114EDXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1www.DataSheet4U.com
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
10
25°C
TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
0.01
VO = 5 V
50
0.001
0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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