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Número de pieza | NTD78N03 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTD78N03
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Power MOSFET
25 V, 78 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• Optimized Gate Charge
• Pb−Free Packages are Available
Applications
• Desktop VCORE
• DC−DC Converters
• Low Side Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
25
"20
14.8
11.5
2.3
V
V
A
W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
11.4 A
8.8
1.4 W
Continuous Drain
Current (RqJC)
TC = 25°C
TC = 85°C
ID
78 A
56
Power Dissipation
(RqJC)
TC = 25°C
PD
64 W
Pulsed Drain Current
tp = 10 ms
IDM 88 A
Current Limited by Package
TA = 25°C IDmaxPkg
32
A
Drain to Source dV/dt
dV/dt
2.0 V/ns
Operating Junction and Storage Temperature TJ, Tstg
−55 to
175
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 5.0 mH, IL(pk) = 17 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS 78 A
EAS 722.5 mJ
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = TBD in sq).
http://onsemi.com
V(BR)DSS
25 V
RDS(on) TYP
4.6 @ 10 V
6.5 @ 4.5 V
D
ID MAX
78 A
N−Channel
G
S
4
4
4
12
3
CASE 369C
DPAK
(Bend Lead)
STYLE 2
1
2
3
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1 23
CASE 369AC
3 IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
23
Drain Source
13
Gate 2 Source
Drain
Y = Year
WW = Work Week
78N03 = Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 0
1
Publication Order Number:
NTD78N03/D
1 page NTD78N03
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 13. Diode Reverse Recovery Waveform
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1000
DUTY CYCLE
100 D = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1
SINGLE PULSE
0.01
1E−05
1E−04
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RθJA(t)
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 14. Thermal Response − Various Duty Cycles
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD78N03
DPAK
75 Units/Rail
NTD78N03T4
DPAK
2500 Tape & Reel
NTD78N03T4G
DPAK
(Pb−Free)
2500 Tape & Reel
NTD78N03−1
DPAK Straight Lead
75 Units/Rail
NTD78N03−1G
DPAK Straight Lead
(Pb−Free)
75 Units/Rail
NTD78N03−35
DPAK−3 Straight Lead
(3.5 " 0.15 mm)
75 Units/Rail
NTD78N03−35G
DPAK−3 Straight Lead
(3.5 " 0.15 mm)
(Pb−Free)
75 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NTD78N03.PDF ] |
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