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Número de pieza | HMC478SC70E | |
Descripción | SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz | |
Fabricantes | Hittite Microwave Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HMC478SC70E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! v00.0607
HMC478SC70 / 478SC70E
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
5
Typical Applications
The HMC478SC70(E) is an ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Features
P1dB Output Power: +17 dBm
Gain: 23 dB
Output IP3: +31 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC478SC70(E) is a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4 GHz. This industry stan-
dard SC70 packaged amplifier can be used as a cas-
cadable 50 Ohm RF/IF gain stage as well as a LO
or PA driver with up to +17 dBm output power. The
HMC478SC70(E) offers 23 dB of gain with a +31 dBm
output IP3 at 850 MHz while requiring only 62 mA
from a single positive supply. The Darlington topol-
ogy results in reduced sensitivity to normal process
variations and excellent gain stability over tempera-
ture while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Gain
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
20
16
13
11
Gain Variation Over Temperature
DC - 4.0 GHz
Input Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
Output Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
Reverse Isolation
DC - 4.0 GHz
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
13
11
9
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Noise Figure
DC - 3.0 GHz
3.0 - 4.0 GHz
Supply Current (Icq)
Typ.
24
20
17
15
0.015
15
17
15
13
20
16
15
12
31
28
25
2.5
2.8
62
Max.
0.02
82
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
5 - 100
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page 5
Pin Descriptions
Pin Number
Function
1, 2, 4, 5
GND
3 RFIN
6 RFOUT
v00.0607
HMC478SC70 / 478SC70E
www.DataSheet4U.com
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Description
These pins must be connected to RF/DC ground.
This pin is DC coupled.
An off chip DC blocking capacitor is required.
RF output and DC Bias (Vcc) for the output stage.
Interface Schematic
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
Frequency (MHz)
1900
2200
18 nH
18 nH
100 pF
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5 - 104
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HMC478SC70E.PDF ] |
Número de pieza | Descripción | Fabricantes |
HMC478SC70 | SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz | Hittite Microwave Corporation |
HMC478SC70E | SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz | Hittite Microwave Corporation |
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